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The P-side emitter in UJT is

  • The P-side emitter in UJT is Heavily doped.
  • The UJT is a three-terminal semiconductor device that has a P-type material with two N-type regions.
  • The heavily doped P-side emitter is one of the N-type regions, while the other N-type region is the base.
  • The third terminal, the emitter, is connected to the P-type material between the two N-type regions.
  • The high carrier concentration in the heavily doped P-side emitter also allows for the UJT to have a low forward voltage drop, which means that it can conduct current with very little energy loss.